CGY2160UH/C1 Image

CGY2160UH/C1

RF Amplifier by OMMIC

Note : Your request will be directed to OMMIC.

The CGY2160UH_C1 from OMMIC is a Distributed Amplifier that operates from 1.5 to 47 GHz. It has an output P1dB of 0.05 W, a small signal gain of 14.5 dB and a noise figure of less than 4.5 dB. The amplifier has an on-chip bias network that includes a current control function which maintains the device operating close to the nominal biasing point over temperature and component dispersion. It is manufactured using OMMIC’s qualified 0.13 μm PHEMT GaAs D01PH technology which is on the European Space Agency (ESA) preferred part list. This amplifier MMIC requires a DC supply of 5 V and consumes less than 150 mA of current.

The CGY2160UH_C1 is available as a chip that measures 1490 x 2580 μm and is suitable for applications such as instrumentation, EW systems, 43 Gb/s OC-768 EAM Drivers and general purpose very wideband amplifiers.

Product Specifications

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Product Details

  • Part Number
    CGY2160UH/C1
  • Manufacturer
    OMMIC
  • Description
    Distributed Amplifier MMIC from 1.5 to 47 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    General Purpose Amplifiers, Instrumentation
  • Industry Application
    Electronic Warfare
  • Frequency
    1.5 to 47 GHz
  • Small Signal Gain
    13.5 to 16.5 dB
  • Gain Flatness
    -1 to 2.5 dB
  • Noise Figure
    2.5 to 4.5 dB
  • P1dB
    17 dBm
  • P1dB
    0.05 W
  • Grade
    Commercial, Military, Space
  • Input Power
    17 dBm
  • Input Power
    0.05 W
  • Power Consumption
    500 mW
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input Return Loss
    0.5 to 17 dB
  • Output Return Loss
    0.5 to 15 dB
  • Supply Voltage
    4.75 to 5.25 V
  • Current Consumption
    150 mA
  • Transistor Technology
    pHEMT GaAs
  • Package Type
    Surface Mount
  • Dimensions
    1490 x 2580 µm
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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