RF Amplifier by OMMIC (33 more products)

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CGY2654UH Image

The CGY2654UH from OMMIC is a Power Amplifier that operates from 32 to 38 GHz. It delivers a saturated output power of 10 W (~40 dBm) with a gain of 20 dB and has a PAE of 25%. This amplifier is manufactured using OMMIC’s high-performance 100 nm gate length GaN-on-Si HEMT power technology which is being evaluated for space applications. It uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. The amplifier requires a DC supply of 12 V and consumes less than 0.69 A of current. It is available as a die that measures 5.85 x 1.5 mm and is suitable for use in radar, electronic warfare, and telecommunication applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    10 W GaN MMIC Power Amplifier from 32 to 38 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT, Die
  • Application
    Instrumentation, Telecommunication
  • Standards Supported
    Ka Band
  • Industry Application
    Radar, Military, Space
  • Frequency
    32 to 38 GHz
  • Gain
    20 dB
  • Grade
    Military, Commercial
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • PAE
    25 %
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    12 V
  • Current Consumption
    0.69 A
  • Transistor Technology
    GaN on Si HEMT
  • Package Type
    Surface Mount
  • Dimensions
    5.85 x 1.5 m