The QPA2309 from Qorvo is a C-band GaN Power Amplifier that operates from 5 to 6 GHz. It delivers a saturated power of up to 100 W with a typical gain of 22 dB and has a power added efficiency of 52%. The amplifier is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. It is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by reducing size and weight while offering better performance.
The amplifier is built on Qorvo's patented QGaN25HV wafer process. This lead-free and RoHS-compliant amplifier is available in a surface-mount QFN package that measures 7 x 7 mm and is suitable for commercial and military radar, and electronic warfare applications. The QPA2309 gives defense customers the ability to dramatically increase their power density output in the same design footprint, to increase radar range and sensitivity without adding size or weight.