HT1818-15M Image


RF Amplifier by RFHIC (203 more products)

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The HT1818-15M is a E-pHEMT GaAs + GaN on SiC Power Amplifier that has been designed for LTE Repeaters, Small Cell Base Statoins and RF Sub-Systems. The Amplifier operates from 1805 to 1880 MHz and has a gain of 34 dB and a high output power of 33 dBm with 41.5 dBm saturated power. It has a high breakdown voltage, high efficiency and is matched to 50 ohms. It is available in a compact surface mount package.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    GaN Hybrid Power Amplifier for LTE Repeaters, Small Cell Base Statoins and RF Sub-Systems
  • Type
  • Configuration
    Module, IC / MMIC
  • Application
  • Standards Supported
    4G, LTE
  • Frequency
    1805 to 1880 MHz
  • Gain
    34 dB
  • Gain Flatness
    ± 0.8 to 1.5 dB
  • P1dB
    33 dBm
  • P1dB
    2 W
  • Saturated Power
    41.5 W
  • Impedance
    50 Ohms
  • Supply Voltage
    28 V
  • Package Type
    Surface Mount
  • Dimensions
    20.5 x 15 x 3.5 mm
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