The RIM251K6-20 from RFHIC is a GaN Solid State Power Amplifier that operates from 2400 to 2500 MHz. It delivers a peak output power of 1.6 kW with a gain of 60 dB and has an efficiency of up to 55 %. The amplifier is built using RFHIC’s cutting edge gallium-nitride (GaN) on SiC HEMT technology that provides excellent efficiency and breakdown voltage. It is suitable for use in CW, pulse, and linear applications and is targeted to replace industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, microwave CVD and sintering.
The RIM251K6-20 requires a DC supply of 50 V and has RS-232 and RS-422 interfaces. It is available in a module that measures 200 x 361.5 x 53 mm with SMA and 7/16 DIN Female connectors. The amplifier is an ideal building block for high power systems, plasma generation, industrial heating, and drying, microwave CVD, microwave sintering, microwave chemistry, materials processing, the study of biological phenomena, and semiconductor equipment applications.