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RRP2731200-08

RF Amplifier by RFHIC | Visit website (159 more products)

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The RRP2731200-08 from RFHIC is an S-band GaN Power Amplifier that operates from 2700 to 3100 MHz. It provides an output power of 250 W with a typical gain of 8 dB and has an average efficiency of 55%. This amplifier has a duty of 20% and a pulse width of 500 us. It is designed using RFHIC’s GaN on SiC HEMT technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency.

This RoHS-compliant amplifier is fully matched to 50-ohms with DC blocking capacitors on both RF ports for simple system integration. It is available in a module that measures 50.8 x 35.8 x 11.1 mm and is ideal for radar-systems applications.

Product Specifications

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Product Details

  • Part Number
    RRP2731200-08
  • Manufacturer
    RFHIC
  • Description
    250 W GaN Power Amplifier for S-Band Radar Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Radar
  • Frequency
    2.7 to 3.1 GHz
  • Power Gain
    7 to 8 dB
  • Gain Flatness
    0.5 to 1 dB
  • Pulse Power
    53.01 to 53.98 dBm
  • Pulse Power
    200 to 250 W
  • Input Power
    46 dBm
  • Input Power
    39.81 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 to 500 us
  • Duty Cycle
    10 to 20 %
  • Rise Time
    200 ns
  • Fall Time
    200 ns
  • Sub-Category
    GaN Amplifier, Pallet Amplifier, Pulsed Amplifier
  • Harmonics
    20 to 30 dBc
  • Spurious
    60 dBc
  • Supply Voltage
    38 V
  • Transistor Technology
    GaN HEMT
  • Dimensions
    50.8 x 35.8 x 11.1 mm
  • Weight
    0.03 kg
  • Storage Temperature
    -50 to 150 Degree C
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