RFHIC model RTP18080-20 employs GaN (Gallium Nitride) technology to provide 49dBm of average output power from 1805-1880MHz. With 40% efficiency, this amplifier is the key for current LTE wave of Remote Radio Head (RRH) solutions, which complement existing macro base stations. The amplifier is 162 x 125 x 18.8 in mm in dimensions, and utilizes high power GaN-SiC transistors. In various industries, companies strive to be eco-friendly, and the RF industry is no exception. Carbon dioxide (chemical formula CO2) reduction has been an important priority due to environmental concerns, and RFHIC is contributing to the trend by introducing one of the most efficient power amplifiers. This amplifier, integrated with Doherty configurations, is 100% RF tested and thermal aged for immediate application to your LTE system.