The RWP0810500-55 from RFHIC is a GaN-on-SiC Power Amplifier Pallet that operates from 0.8 to 1 GHz. It delivers a CW output power of 500 W and a power gain of 55 dB with a power-added efficiency of 55%. This amplifier is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors and has a VSWR of 1.43:1. It has harmonic levels of less than -60 dBc and spurious of -70 dBc.
The RWP0810500-55 requires a DC supply of 48 V and consumes 2.4 A of current. It is available in a module that measures 220 x 31.1 x 196 mm and has SMA female (input) and N-type female (output) connectors. This amplifier is ideal for RF sub-systems and plasma applications.
