TG2000-10

RF Amplifier by RFHIC | Visit website (167 more products)

Note : Your request will be directed to RFHIC.

TG2000-10 Image

The TG2000-10 from RFHIC is a GaN Hybrid Power Amplifier that operates from 200 to 2000 MHz. It provides an output power of 6 W with a gain of up to 12 dB and has an average efficiency of 50%. The amplifier is designed using RFHIC’s GaN on SiC HEMT with a hybrid surface mount package and is attached to a copper sub-carrier. It is fully matched to 50-ohms with DC blocking capacitors on both RF ports for simple system integration. The unit is available as a surface-mount package that measures 15 x 10 x 5.4 mm and is suitable for use in radio systems, trunked radio systems, RF sub-systems and base stations.

This amplifier can be used at frequencies as low as 30 MHz by adding a 220 nH inductor to the drain bias network.

Product Specifications

View similar products

Product Details

  • Part Number
    TG2000-10
  • Manufacturer
    RFHIC
  • Description
    GaN Hybrid Power Amplifier from 200 to 2000 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Radio Systems
  • Industry Application
    Broadcast, Wireless Infrastructure
  • Frequency
    200 MHz to 2 GHz
  • Gain
    10 to 12 dB
  • Output Power
    40 dBm (P3dB)
  • Output Power
    10 W (P3dB)
  • P1dB
    37 to 38 dBm
  • P1dB
    6.31 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Hybrid Amplifier, GaN Amplifier
  • Supply Voltage
    28 V
  • Current Consumption
    800 mA
  • Transistor Technology
    GaN on SiC
  • Technology
    HEMT
  • Package Type
    Surface Mount
  • Package
    NP-18
  • Dimensions
    15 x 10 x 5.4 mm
  • Weight
    2 g
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • RoHS
    Yes
  • Note
    Efficiency : 40 to 50 %

Technical Documents