The TG2000-10 from RFHIC is a GaN Hybrid Power Amplifier that operates from 200 to 2000 MHz. It provides an output power of 6 W with a gain of up to 12 dB and has an average efficiency of 50%. The amplifier is designed using RFHIC’s GaN on SiC HEMT with a hybrid surface mount package and is attached to a copper sub-carrier. It is fully matched to 50-ohms with DC blocking capacitors on both RF ports for simple system integration. The unit is available as a surface-mount package that measures 15 x 10 x 5.4 mm and is suitable for use in radio systems, trunked radio systems, RF sub-systems and base stations.
This amplifier can be used at frequencies as low as 30 MHz by adding a 220 nH inductor to the drain bias network.