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RAP2833P60

Note : Your request will be directed to RFTR Electronics.

The RAP2833P60 from RFTR Electronics is a RF Amplifier with Frequency 2.8 to 3.3 GHz, Gain 10 dB, Gain Flatness ±1 dB, Output Power 60 dBm, Output Power 1000 W. Tags: Through Hole, Power Amplifier. More details for RAP2833P60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RAP2833P60
  • Manufacturer
    RFTR Electronics
  • Description
    1000 W, GaN on SiC Transistor Technology Amplifiers from 2.8 to 3.3 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Aerospace & Defense, Radar
  • Frequency
    2.8 to 3.3 GHz
  • Gain
    10 dB
  • Gain Flatness
    ±1 dB
  • Output Power
    60 dBm
  • Output Power
    1000 W
  • Grade
    Military
  • Class
    Class AB
  • Pulsed/CW
    CW
  • Rise Time
    50 nsec
  • Fall Time
    50 nsec
  • VSWR
    2.00:1
  • Input VSWR
    2.00:1
  • Sub-Category
    SSPA, Pallet Amplifier
  • Pulse Droop
    0.5 dB
  • Supply Voltage
    50 V
  • Transistor Technology
    GaN on SiC
  • Package Type
    Through Hole
  • Dimensions
    6.26 x 5.40 Inches (L x W)
  • Connectors
    SMA, SMA - Female
  • Input Connector
    SMA - Female
  • Output Connector
    SMA - Female
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

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