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CHA6653-98F

RF Amplifier by United Monolithic Semiconductors (112 more products)

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The CHA6653-98F from United Monolithic Semiconductors is a Four Stage Monolithic GaAs Power Amplifier that operates from 27 to 34 GHz. It provides a saturated output power of 32 dBm, P1 dB of 21 dBm, OIP3 of up to 38 dBm and a linear gain of 23 dB. The amplifier is highly linear with gain control capability and an integrated power detector. It requires a DC supply of 6V and has a current consumption of 0.9 A. This ESD Protected Amplifier is designed using a GaAs PHEMT 0.15um process and is ideal for telecommunication applications.

Product Specifications

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Product Details

  • Part Number
    CHA6653-98F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    GaAs Power Amplifier of 27 to 34 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Telecommunication
  • Frequency
    27 to 34 GHz
  • Gain
    23 dB
  • Small Signal Gain
    23 dB
  • Gain Flatness
    0.04 dB
  • Output Power
    32 dBm
  • Output Power
    1.5 W
  • Gain Control Range
    15 dB
  • P1dB
    31 dBm
  • P1dB
    1.2 W
  • IP3
    38 dBm
  • IP3
    38 dBm
  • Saturated Power
    32 dBm
  • Saturated Power
    1.5 W
  • Input Power
    15 dBm
  • Input Power
    0.03 W
  • PAE
    17 Percent
  • Impedance
    50 Ohms
  • Sub-Category
    Linear Amplifier
  • Return Loss
    8 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    6 V
  • Current Consumption
    0.9 A
  • Transistor Technology
    GaAs
  • Package Type
    Chip
  • Dimensions
    3.61 x 3.46 x 0.07 mm
  • Operating Temperature
    -40 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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