F2255 Image


RF Variable Attenuator by Integrated Device Technology (10 more products)

Note : Your Quotation Request will be directed to Integrated Device Technology.

The F2255 from IDT is a silicon based voltage variable attenuator that operates from 1 MHz to 3 GHz. It has about half the insertion loss of competitive solutions, IP3 performance 1000x (30 dB) better than the competing Gallium arsenide (GaAs) device, and they exhibit a linear-in-dB attenuation characteristic across the voltage control range. It has an attenuation range of 34.6 dB and has a settling time of 15 us. The F2255 is available in a 16-pin QFN package that measures 3 x 3 mm. It is ideal for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios, and HF, VHF and UHF radios.

Product Specifications

  • Part Number
  • Manufacturer
    Integrated Device Technology
  • Description
    1 MHz to 3 GHz Silicon Based Voltage Variable RF Attenuator
  • Type
  • Application Standards
    2G, 3G, 4G, WiMAX, WLAN
  • Applications
    Base Station, Point to Point, SATCOM, Military, Radio, RFID, Test & Measurement
  • Frequency
    1 MHz to 3 GHz
  • Attenuation Range
    33 to 34.6 dB
  • Power
    3.16 W (output - IP3)
  • P1dB
    36 dBm
  • IIP3
    60 dBm
  • Insertion Loss
    1.1 to 1.7 dB
  • Supply Voltage
    3.15 to 5.25 V
  • Current
    0.80 to 1.50 mA
  • Package Type
  • Operating Temperature
    -40 to 105 Degree C
  • Grade
    Commercial, Military
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

Let us know what you need, we can help find products that meet your requirement.