The F2258 from IDT is a silicon based voltage variable attenuator that operates from 50 MHz to 6 GHz. It has about half the insertion loss of competitive solutions, IP3 performance 1000x (30 dB) better than the competing Gallium arsenide (GaAs) device, and they exhibit a linear-in-dB attenuation characteristic across the voltage control range. It has an attenuation range of 35 dB and has a settling time of 15 ms. The F2255 is available in a 16-pin QFN package that measures 3 x 3 mm. It is ideal for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios, and HF, VHF and UHF radios.