The BAT854AW from NXP Semiconductors is a RF Schottky Diode with Forward Voltage 420 V@IF=10mA, Current Surge Peak 0.1 A, Voltage 40 V, Current 200 mA, Capacitance 20 pF@VR=1V. Tags: Surface Mount. More details for BAT854AW can be seen below.

Product Specifications

    Product Details

    • Part Number :
      BAT854AW
    • Manufacturer :
      NXP Semiconductors
    • Description :
      General Purpose Schottky Diodes

    General Parameters

    • Configuration :
      Dual Common Anode
    • Forward Voltage :
      420 V@IF=10mA
    • Current Surge Peak :
      0.1 A
    • Voltage :
      40 V
    • Current :
      200 mA
    • Capacitance :
      20 pF@VR=1V
    • Grade :
      Military, Commercial
    • Package Type :
      Surface Mount
    • Package :
      SOT323, SC-70
    • Dimension :
      2 x 1.25 x 0.95 mm

    Technical Documents

Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.