The RB521S30 from NXP Semiconductors is a RF Schottky Diode with Forward Voltage 500 V@IF=200mA, Current Surge Peak 1 A, Voltage 30 V, Current 200 mA, Capacitance 25 pF@VR=1V. More details for RB521S30 can be seen below.

Product Specifications

  • Part Number
    RB521S30
  • Manufacturer
    NXP Semiconductors
  • Description
    General Purpose Schottky Diodes
  • Configuration
    Single
  • Forward Voltage
    500 V@IF=200mA
  • Current Surge Peak
    1 A
  • Voltage
    30 V
  • Current
    200 mA
  • Capacitance
    25 pF@VR=1V
  • Grade
    Military, Commercial
  • Package Type
    Surface Mount
  • Package
    SOD523, SOD523
  • Dimension
    1.2 x 0.8 x 0.6 mm
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