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The NSR01F30NXT5G from ON Semiconductor is a RF Schottky Diode with Peak Reverse Voltage 30 V, Forward Voltage 0.37 V, Current Surge Peak 4 A, Current 0.1 A, Capacitance 7 pF. More details for NSR01F30NXT5G can be seen below.
Mitsubishi Electric Corporation has announced that its lineup of gallium-nitride high-electron-mobility transistors (GaN-HEMTs) for satellite communication (SATCOM) earth stations will be expanded with the addition of new Ku-band (12-18GHz) 70W and 100W GaN HEMTs suitable for multi-carrier applications.... read more
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