The SBE813 from ON Semiconductor is a RF Schottky Diode with Peak Reverse Voltage 30 V, Forward Voltage 0.485 V, Current Surge Peak 20 A, Current 3 A, Capacitance 90 pF. More details for SBE813 can be seen below.

Product Specifications

  • Part Number
  • Manufacturer
    ON Semiconductor
  • Description
    Schottky Barrier Diode, 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
  • Configuration
  • Peak Reverse Voltage
    30 V
  • Forward Voltage
    0.485 V
  • Current Surge Peak
    20 A
  • Current
    3 A
  • Capacitance
    90 pF
  • Recovery Time
    20 ns
  • Package
    SOT-28FL / VEC-8
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