HVV0405-175 Image

HVV0405-175

RF Transistor by Advanced Semiconductor, Inc.

Note : Your request will be directed to Advanced Semiconductor, Inc..

The HVV0405-175 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 420 to 470 MHz, Power 52.43 dBm, Power(W) 175 W, Duty_Cycle 0.1, Gain 25.5 dB. Tags: Flange. More details for HVV0405-175 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    HVV0405-175
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    420 to 470 MHz, 175 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    UHF
  • CW/Pulse
    Pulse
  • Frequency
    420 to 470 MHz
  • Power
    52.43 dBm
  • Power(W)
    175 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    25.5 dB
  • Power Gain (Gp)
    23.5 to 27.5 dB
  • Input Return Loss
    -8 to -6 dB
  • VSWR
    20.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.1 to 1.7 V
  • Input Power
    1.2 W
  • Drain Gate Voltage
    0.1
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Drain Current
    50 mA
  • Drain Bias Current
    1.7
  • Drain Leakage Current (Id)
    50 to 100 uA
  • Gate Leakage Current (Ig)
    10 to 100 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.4 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Rise Time : 25 to 50 nS, Fall Time : 22 to 50 nS, Pulse Droop : 0.3 to 0.5 dB, Gate QuiesCent Voltage : 1.1 to 1.45 V

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.