HVV0912-800 Image

HVV0912-800

RF Transistor by Advanced Semiconductor, Inc.

Note : Your request will be directed to Advanced Semiconductor, Inc..

The HVV0912-800 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 960 MHz to 1.21 GHz, Power 59.03 dBm, Power(W) 800 W, Duty_Cycle 0.1, Gain 15.5 dB. Tags: Flange. More details for HVV0912-800 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV0912-800
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    960 MHz to 1.21 GHz, 800 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.21 GHz
  • Power
    59.03 dBm
  • Power(W)
    800 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Gain
    15.5 dB
  • Power Gain (Gp)
    15.5 dB
  • Power Added Effeciency
    0.5
  • Input Return Loss
    10 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.5
  • Drain Current
    80000 mA
  • Drain Leakage Current (Id)
    500 uA
  • Gate Leakage Current (Ig)
    10 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Pulse Droop : 0.20 dB

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