HVV1011-035 Image

HVV1011-035

RF Transistor by Advanced Semiconductor, Inc.

Note : Your request will be directed to Advanced Semiconductor, Inc..

The HVV1011-035 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 45.44 dBm, Power(W) 35 W, Duty_Cycle 0.05, Gain 20 to 21.5 dB. Tags: Surface Mount. More details for HVV1011-035 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV1011-035
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.03 to 1.09 GHz, 35 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    45.44 dBm
  • Power(W)
    35 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    0.05
  • Gain
    20 to 21.5 dB
  • Power Gain (Gp)
    20 to 21.5 dB
  • Input Return Loss
    -12 to -8 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.7 to 1.7 V
  • Drain Gate Voltage
    0.7
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Drain Current
    2000 mA
  • Drain Bias Current
    1.7
  • Drain Leakage Current (Id)
    15 to 50 uA
  • Gate Leakage Current (Ig)
    2 to 10 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    1.5 Degree C/W
  • Package Type
    Surface Mount
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate QuiesCent Voltage : 1 to 1.7 V

Technical Documents

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