HVV1011-1000L

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HVV1011-1000L Image

The HVV1011-1000L from ASI Semiconductor is a silicon enhancement mode RF transistor that operates from 1030 to 1090 MHz. It provides an output power of 1000 Watts with a gain of 15.5 dB and has a drain efficiency of 50 % (@ 1030 MHz). This high-voltage transistor requires a supply voltage of 50 V.

The HV1011-1000L is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. The device is available in a RoHS-Compliant flanged package with a ceramic lid and is ideal for L-band pulsed avionics applications.

Product Specifications

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Product Details

  • Part Number
    HVV1011-1000L
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1000 W Si-Enhancement Mode Transistor from 1030 to 1090 MHz

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    60 dBm
  • Power(W)
    1000 W
  • Pulsed Width
    32 us (On), 18 us(off), x 48
  • Duty_Cycle
    0.02
  • Gain
    15.5 dB
  • Power Gain (Gp)
    15.5 dB
  • Power Added Effeciency
    0.5
  • Input Return Loss
    10 dB
  • VSWR
    20.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.5
  • Drain Leakage Current (Id)
    500 uA
  • Gate Leakage Current (Ig)
    10 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Pulse Droop : 0.20 dB

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