The HVV1011-1000L from ASI Semiconductor is a silicon enhancement mode RF transistor that operates from 1030 to 1090 MHz. It provides an output power of 1000 Watts with a gain of 15.5 dB and has a drain efficiency of 50 % (@ 1030 MHz). This high-voltage transistor requires a supply voltage of 50 V.
The HV1011-1000L is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. The device is available in a RoHS-Compliant flanged package with a ceramic lid and is ideal for L-band pulsed avionics applications.