HVV1011-180L

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HVV1011-180L Image

The HVV1011-180L from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 52.55 to 52.96 dBm, Power(W) 180 to 198 W, Gain 18.5 dB, Power Gain (Gp) 18.5 dB. Tags: Flange. More details for HVV1011-180L can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV1011-180L
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.03 to 1.09 GHz, 180 to 198 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    52.55 to 52.96 dBm
  • Power(W)
    180 to 198 W
  • Pulsed Width
    32 us (On), 18 us(off), x 48
  • Gain
    18.5 dB
  • Power Gain (Gp)
    18.5 dB
  • Power Added Effeciency
    0.45
  • Input Return Loss
    10 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Input Power
    1.7 to 2.8 W
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.45
  • Drain Current
    8000 mA
  • Drain Leakage Current (Id)
    100 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Junction Temperature (Tj)
    180 Degree C
  • Package Type
    Flange
  • Storage Temperature
    -40 to 180 Degree C

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