HVV1012-060 Image

HVV1012-060

RF Transistor by Advanced Semiconductor, Inc.

Note : Your request will be directed to Advanced Semiconductor, Inc..

The HVV1012-060 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.02 to 1.5 GHz, Power 47.78 dBm, Power(W) 60 W, Duty_Cycle 0.01, Gain 23 dB. Tags: Flange. More details for HVV1012-060 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV1012-060
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.02 to 1.5 GHz, 60 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.02 to 1.5 GHz
  • Power
    47.78 dBm
  • Power(W)
    60 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.01
  • Gain
    23 dB
  • Power Gain (Gp)
    23 dB
  • Power Added Effeciency
    0.52
  • Input Return Loss
    9 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.52
  • Drain Current
    4000 mA
  • Drain Leakage Current (Id)
    50 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.28 Degree C/W
  • Package Type
    Flange
  • Storage Temperature
    -65 to 200 Degree C

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