HVV1012-550 Image

HVV1012-550

RF Transistor by Advanced Semiconductor, Inc.

Note : Your request will be directed to Advanced Semiconductor, Inc..

The HVV1012-550 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.02 to 1.15 GHz, Power 58.06 dBm, Power(W) 640 W, Duty_Cycle 0.01, Gain 17.3 dB. Tags: Flange. More details for HVV1012-550 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    HVV1012-550
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.02 to 1.15 GHz, 640 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.02 to 1.15 GHz
  • Power
    58.06 dBm
  • Power(W)
    640 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.01
  • Gain
    17.3 dB
  • Power Gain (Gp)
    16.5 to 17.3 dB
  • Power Added Effeciency
    0.48
  • Input Return Loss
    -12 to -7 dB
  • VSWR
    20.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.7 to 1.7 V
  • Input Power
    12 to 28 W
  • Drain Gate Voltage
    0.7
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Drain Efficiency
    0.48
  • Drain Current
    100 mA
  • Drain Bias Current
    1.7
  • Drain Leakage Current (Id)
    100 to 400 uA
  • Gate Leakage Current (Ig)
    2 to 10 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.03 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Rise Time : 35 to 50 nS, Fall Time : 15 to 50 nS, Pulse Droop : 0.1 to 0.3 dB, Gate QuiesCent Voltage : 1 to 1.7 V

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.