HVV1214-140 Image

HVV1214-140

RF Transistor by Advanced Semiconductor, Inc.

Note : Your request will be directed to Advanced Semiconductor, Inc..

The HVV1214-140 from Advanced Semiconductor, Inc. is an Enhancement Mode RF MOSFET Power Transistor that operates from 1200 to 1400 MHz. The high voltage MOSFET transistor produces over 140 W of pulsed output power with a gain of 20.5 dB and has an efficiency of 43%. The device has a pulse width of 200 µs and a duty cycle of 10%. It requires a 50 V supply voltage and consumes 100 mA of current. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. This RoHS-compliant power transistor is available in a flange type package and is ideal for high-power pulsed applications such as L-band ground-based radars.

Product Specifications

View similar products

Product Details

  • Part Number
    HVV1214-140
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    140 W MOSFET Power Transistor from 1200 to 1400 MHz

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    51.46 dBm
  • Power(W)
    140 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    10 %
  • Gain
    20.5 dB
  • Power Gain (Gp)
    18 to 19.5 dB
  • Input Return Loss
    -7 to -5 dB
  • VSWR
    20.0:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.7 to 1.7 V
  • Input Power
    3.4 W
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -10 to 10 V
  • Drain Efficiency
    44 to 46 %
  • Drain Current
    100 mA
  • Drain Leakage Current (Id)
    50 to 100 uA
  • Gate Leakage Current (Ig)
    10 to 100 nA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.54 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Rise Time : 25 to 50 nS, Fall Time : 15 to 50 nS, Pulse Droop : 0.8 to 0.55 dB, Gate QuiesCent Voltage : 1.1 to 1.45 V

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.