AM030MH4-BI-R

Note : Your request will be directed to AMCOM Communications, Inc..

The AM030MH4-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 3 GHz, Power(W) 3.98 W, P1dB 31 dBm, Power Gain (Gp) 16 to 19 dB, Supply Voltage 28 to 32 V. Tags: Flange. More details for AM030MH4-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM030MH4-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    HiFET High Voltage GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application
    PCS, Base Station, WLAN, Repeater, C Band VSAT, Avionics, Communication
  • CW/Pulse
    CW
  • Frequency
    DC to 3 GHz
  • Power(W)
    3.98 W
  • P1dB
    31 dBm
  • Power Gain (Gp)
    16 to 19 dB
  • Supply Voltage
    28 to 32 V
  • Breakdown Voltage - Drain-Source
    44 to 60 V
  • Thermal Resistance
    6.7 °C/W
  • Package Type
    Flange
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

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