AM120MH2-BI-R

RF Transistor by AMCOM Communications, Inc.

Note : Your request will be directed to AMCOM Communications, Inc..

The AM120MH2-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 6 GHz, Power(W) 7.94 W, P1dB 38 dBm, Power Gain (Gp) 12 to 14 dB, Supply Voltage 8 to 16 V. Tags: Flange. More details for AM120MH2-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM120MH2-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    HiFET High Voltage GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application
    PCS, Base Station, WLAN, Repeater, Avionics, Communication
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power(W)
    7.94 W
  • P1dB
    38 dBm
  • Power Gain (Gp)
    12 to 14 dB
  • Supply Voltage
    8 to 16 V
  • Breakdown Voltage - Drain-Source
    22 to 30 V
  • Thermal Resistance
    4.9 °C/W
  • Package Type
    Flange
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

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