BLC10G22XS-570AVT

RF Transistor by Ampleon (289 more products)

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The BLC10G22XS-570AVT from Ampleon is an LDMOS Power Transistor that operates from 2110 to 2180 MHz. It delivers an output power of more than 550 W with a gain of 16 dB and has a drain efficiency of 48%. The transistor has a low thermal resistance which provides excellent thermal stability and is designed for low memory effects which provide digital pre-distortion capability. It is available in an internally matched package with integrated ESD protection and is suitable for base station applications.

Product Specifications

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Product Details

  • Part Number
    BLC10G22XS-570AVT
  • Manufacturer
    Ampleon
  • Description
    550 W LDMOS Power Transistor from 2110 to 2180 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Base Station
  • Application
    Amplifier, Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    2110 to 2180 MHz
  • Power
    49.68 dBm
  • Power(W)
    93 W
  • Peak Output Power
    549 to 631 W
  • Gain
    16.2 dB
  • Power Gain (Gp)
    14.7 to 15.7 dB
  • Input Return Loss
    -14 to -9 dB
  • Supply Voltage
    30 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to 9 V
  • Drain Efficiency
    44 to 48 %
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flange
  • Package
    6 leaded flange
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents