BLC10G22XS-603AVT

RF Transistor by Ampleon (291 more products)

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The BLC10G22XS-603AVT from Ampleon is an LDMOS Power Transistor that operates from 2110 to 2170 MHz. It delivers an output power of 600 W with a power gain of 15.4 dB and has a drain efficiency of 47.5%. This transistor has low thermal resistance which provides excellent thermal stability and has low memory effects for digital pre-distortion. It is available in an internally matched package with integrated ESD protection and is suitable for wireless infrastructure and base station applications.

Product Specifications

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Product Details

  • Part Number
    BLC10G22XS-603AVT
  • Manufacturer
    Ampleon
  • Description
    600 W LDMOS Power Transistor from 2110 to 2170 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Wireless Infrastructure
  • Application
    Amplifier, Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    2110 to 2170 MHz
  • Power
    50.41 dBm
  • Power(W)
    110 W
  • Peak Output Power
    578 to 687 W
  • Power Gain (Gp)
    14.5 to 15.4 dB
  • Input Return Loss
    -20 to -12 dB
  • VSWR
    10:1
  • Supply Voltage
    30 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to 9 V
  • Drain Efficiency
    44 to 47.5 %
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flange
  • Package
    6 leaded flange
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents