BLC8G27LS-100AV Image

BLC8G27LS-100AV

RF Transistor by Ampleon (238 more products)

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The BLC8G27LS-100AV from Ampleon is a RF Transistor with Frequency 2.49 to 2.69 GHz, Power 50 dBm, Power(W) 100 W, P1dB 50 dBm, Duty_Cycle 0.1. More details for BLC8G27LS-100AV can be seen below.

Product Specifications

  • Part Number
    BLC8G27LS-100AV
  • Manufacturer
    Ampleon
  • Description
    50 dBm (100 W), LDMOS Transistor from 2496 to 2690 MHz
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.49 to 2.69 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • P1dB
    50 dBm
  • Peak Output Power
    112 to 133 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14.3 to 15.5 dB
  • Input Return Loss
    -10 to -6 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 2.3 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    250 mA
  • Package Type
    Surface Mount
  • Package
    SOT1275-1
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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