BLF8G27LS-150GV Image

BLF8G27LS-150GV

RF Transistor by Ampleon (238 more products)

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The BLF8G27LS-150GV from Ampleon is a RF Transistor with Frequency 2.6 to 2.7 GHz, P1dB 51.76 dBm, Duty_Cycle 0.1, Power Gain (Gp) 16.8 to 18 dB, Input Return Loss -10 to -7 dB. More details for BLF8G27LS-150GV can be seen below.

Product Specifications

  • Part Number
    BLF8G27LS-150GV
  • Manufacturer
    Ampleon
  • Description
    51.76 dBm (150 W), LDMOS Transistor from 2500 to 2700 MHz
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.6 to 2.7 GHz
  • P1dB
    51.76 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    16.8 to 18 dB
  • Input Return Loss
    -10 to -7 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 2.3 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    1300 mA
  • Package Type
    Surface Mount
  • Package
    SOT1244C
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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