BLL9G1214L-600 Image

BLL9G1214L-600

RF Transistor by Ampleon (240 more products)

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The BLL9G1214L-600 from Ampleon is a LDMOS L-band RF power transistor that operates from 1200 MHz to 1400 MHz. The transistor provides up to 600 Watts of power with a gain of 19 dB while operating on a 32 V supply. It is available in a flanged ceramic package with 2 mounting holes and 2 leads. The device is ideal for L-band radar applications.

Product Specifications

    Product Details

    • Part Number :
      BLL9G1214L-600
    • Manufacturer :
      Ampleon
    • Description :
      600 W LDMOS Power Transistor from 1.2 to 1.4 GHz

    General Parameters

    • Transistor Type :
      LDMOS
    • Application Industry :
      Radar
    • Frequency :
      1.2 GHz to 1.4 GHz
    • Power :
      57.78 dBm
    • Power(W) :
      600 W
    • Gain :
      19 dB
    • Input Return Loss :
      -7 dB
    • Supply Voltage :
      32 V
    • Threshold Voltage :
      1.5 to 2.5 V
    • Breakdown Voltage :
      65 V
    • Drain Efficiency :
      56 to 60 %
    • Drain Leakage Current (Id) :
      5 uA
    • Gate Leakage Current (Ig) :
      400 nA
    • Junction Temperature (Tj) :
      225 Degree C
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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