BLM8G0710S-30PBG Image

BLM8G0710S-30PBG

RF Transistor by Ampleon (373 more products)

Note : Your Quotation Request will be directed to Ampleon.

The BLM8G0710S-30PBG from Ampleon is a dual section, 2-stage power LDMOS MMIC that operates from 700 to 1000 MHz. It provides 29.7 Watts of power, a gain of 35.8 dB with a flatness of 0.5 dB and drain efficiency of 51.7%. This transistor is available in a SOT1212-1 plastic package and is RoHS complaint. It can be used in dual section or single ended, Doherty, quadrature combined and push-pull circuits.

Product Specifications

  • Part Number
    BLM8G0710S-30PBG
  • Manufacturer
    Ampleon
  • Description
    0.7 to 1 GHz High Power LDMOS RF Transistor
  • Transistor Type
  • Application Type
    Base Stations
  • Grade
    Commercial
  • Frequency
    700 to 1000 MHz
  • Gain
    35.7 dB
  • Power Gain (Gp)
    35.7 dB
  • Power
    44.77 dBm (30 W)
  • Drain Efficiency
    0.27
  • Input Return Loss
    -16 to -10 dB
  • Voltage - Drain-Source (Vdss)
    28 V
  • Package Type
    Plastic
  • Package
    SOT1212-1
  • RoHS
    Yes
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