BLP9H10-30G Image

BLP9H10-30G

RF Transistor by Ampleon

Note : Your request will be directed to Ampleon.

The BLP9H10-30G from Ampleon is a LDMOS power transistor that operates from 616 to 960 MHz. It provides an output power of 30 watts with high power gain and has excellent thermal stability. This device has integrated ESD protection and is RoHS complaint. It is available in a small plastic package and is ideal for FDD/TDD LTE, GSM EDGE, CDMA, WiMAX and other base station applications.

Product Specifications

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Product Details

  • Part Number
    BLP9H10-30G
  • Manufacturer
    Ampleon
  • Description
    30 W LDMOS Power Transistor 616 to 960 MHz for Base Stations

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    GSM, CDMA, WCDMA, WiMax, EDGE, LTE
  • CW/Pulse
    CW
  • Frequency
    616 to 960 MHz
  • Power
    44.77 dbm
  • Power(W)
    30 W
  • Power Gain (Gp)
    17.3 to 18.3 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage
    105 V
  • Drain Efficiency
    10 to 13.5 %
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents

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