CLF1G0035S-100P Image

CLF1G0035S-100P

RF Transistor by Ampleon (374 more products)

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The CLF1G0035S-100P from Ampleon is a RF Transistor with Frequency DC to 3.5 GHz, Gain 14 dB (Power Gain), Power 50 dBm, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 150 V. More details for CLF1G0035S-100P can be seen below.

Product Specifications

  • Part Number
    CLF1G0035S-100P
  • Manufacturer
    Ampleon
  • Description
    DC to 3.5 GHz, GaN HEMT Transistor
  • Transistor Type
  • Application
    WiMax, Radio
  • Application Type
    Radar, Commercial, Cellular, EMC Testing, Jammers, Wireless Infrastructure, Medical
  • Class
    AB
  • Grade
    Military, Space, Commercial
  • Frequency
    DC to 3.5 GHz
  • Gain
    14 dB (Power Gain)
  • Power
    50 dBm
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.5
  • Current
    330 mA
  • Input Return Loss
    -6 dB
  • VSWR
    12/30/1899 10:01:00 AM
  • Voltage - Gate-Source (Vgs)
    -8 to 3 V
  • Package Type
    Ceramic
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    GaN RF power transistors - Ampleon
  • Note
    Rise Time : 5 ns, Fall Time : 5 ns
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