BCF030T

RF Transistor by BeRex, Inc. (25 more products)

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The BCF030T from BeRex, Inc. is a RF Transistor with Frequency DC to 26.5 GHz, Power(W) 0.15 W, P1dB 19 dBm, Gain 8.9 to 13.5 dB, Noise Figure 1.45 dB. More details for BCF030T can be seen below.

Product Specifications

  • Part Number
    BCF030T
  • Manufacturer
    BeRex, Inc.
  • Description
    HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
  • Transistor Type
    MESFET
  • Technology
    GaAs
  • Application Industry
    Test & Measurement, Aerospace & Defence
  • Application
    Commercial, Military
  • CW/Pulse
    CW
  • Frequency
    DC to 26.5 GHz
  • Power(W)
    0.15 W
  • P1dB
    19 dBm
  • Gain
    8.9 to 13.5 dB
  • Noise Figure
    1.45 dB
  • Transconductance
    35 to 50 mS
  • Supply Voltage
    6 to 8 V
  • Breakdown Voltage
    -15 to -11 V (Drain Breakdown Voltage), -10 to -7 V (Source Breakdown Voltage)
  • Drain Bias Current
    60 to 120 mA (Saturated)
  • Thermal Resistance
    120 C/W
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -60 to 150 Degree C
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