BCF120T

RF Transistor by BeRex, Inc. (25 more products)

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The BCF120T from BeRex, Inc. is a RF Transistor with Frequency DC to 26.5 GHz, Power(W) 0.63 W, P1dB 25.4 dBm, Gain 7.2 to 11.2 dB, Supply Voltage 6 to 8 V. More details for BCF120T can be seen below.

Product Specifications

  • Part Number
    BCF120T
  • Manufacturer
    BeRex, Inc.
  • Description
    HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
  • Transistor Type
    MESFET
  • Technology
    GaAs
  • Application Industry
    Test & Measurement, Aerospace & Defence
  • Application
    Commercial, Military
  • CW/Pulse
    CW
  • Frequency
    DC to 26.5 GHz
  • Power(W)
    0.63 W
  • P1dB
    25.4 dBm
  • Gain
    7.2 to 11.2 dB
  • Transconductance
    140 to 200 mS
  • Supply Voltage
    6 to 8 V
  • Breakdown Voltage
    -15 to -11 V (Drain Breakdown Voltage), -10 to -7 V (Source Breakdown Voltage)
  • Drain Bias Current
    200 to 440 mA (Saturated)
  • Thermal Resistance
    40 C/W
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -60 to 150 Degree C
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