BCF120T

RF Transistor by BeRex, Inc. (6 more products)

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The BCF120T from BeRex, Inc. is a RF Transistor with Frequency DC to 26.5 GHz, Gain 9.0 dBm@ 12 GHZ, 9.3 dBm@ 18 GHz, Power 26.0 dBm@ 12 GHZ, 27.9 dBm@ 18 GHz, P1dB 26.0 dBm@ 12 GHZ, 27.9 dBm@ 18 GHz, Input Power 25 dBm@ 3dB. More details for BCF120T can be seen below.

Product Specifications

  • Part Number
    BCF120T
  • Manufacturer
    BeRex, Inc.
  • Description
    0.25 µm x 1200 µm, High Efficiency Hetrojuction Power FET with Low Phase Noise
  • Transistor Type
  • Application Type
    Commercial, Test & Measurement
  • Features
    Low Phase Noise, 0.25 X 1200 Micron Recessed Gate
  • Grade
    Commercial
  • Frequency
    DC to 26.5 GHz
  • Gain
    9.0 dBm@ 12 GHZ, 9.3 dBm@ 18 GHz
  • Power
    26.0 dBm@ 12 GHZ, 27.9 dBm@ 18 GHz
  • P1dB
    26.0 dBm@ 12 GHZ, 27.9 dBm@ 18 GHz
  • Input Power
    25 dBm@ 3dB
  • Breakdown Voltage - Drain-Source
    -15 to -11 V(Drain), -10 to -7 V(Source)
  • Drain Current
    0.2 to 0.44 A
  • Power Added Effeciency
    31 %@ 12 GHz - 39 %@ 18 GHz
  • Technology
    GaAs
  • Power Dissipation (Pdiss)
    2.8 to 3.3 W
  • Voltage - Drain-Source (Vdss)
    6 to 8 V
  • Thermal Resistance
    40°C/W
  • Package
    Surface Mount
  • Dimension
    0.25 µm x 1200 µm
  • RoHS
    Yes
  • Operating Temperature
    25°C
  • Storage Temperature
    -60 to 150 °C
  • Tags
    BCF Series Berex
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