BCG008 Image


RF Transistor by BeRex, Inc.

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The BCG008 from BeRex is a GaN Power HEMT Die that is suited for amplifier applications from DC to 26 GHz. At a 12 GHz test frequency, it delivers a saturated output power of 8 W (~39 dBm) with a gain of more than 8 dB and power-added efficiency (PAE) of 72%. This GaN-based transistor has been developed using state-of-the-art metallization with SI3N4 passivation and is screened for reliability. It has a nominal 0.15-micron gate length and 1250 micron gate width. The BCG008 can be used for wide-band and narrow-band applications. It is ideal for commercial, military/high-reliability, and test & measurement applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    BeRex, Inc.
  • Description
    8 W GaN Power HEMT Die from DC to 26 GHz

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Test & Measurement, Commercial, Military
  • Application
    Test Instrumentation
  • CW/Pulse
  • Frequency
    DC to 26 GHz
  • Power
    39 dBm
  • Power(W)
    8 W
  • Power Gain (Gp)
    8 to 9.5 dB
  • Power Added Effeciency
  • Supply Voltage
    28 V
  • Breakdown Voltage
    -6.5 V
  • Breakdown Voltage - Drain-Source
    84 V
  • Voltage - Drain-Source (Vdss)
    90 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    510 to 770 mA
  • Power Dissipation (Pdiss)
    15.0 W
  • Thermal Resistance
    4.9 Degree C/W
  • Package Type
  • Dimension
    0.15µm x 1250µm
  • Grade
    Commerical, Military
  • Storage Temperature
    -60 to 150 Degree C
  • Tags
    BCG Series

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