CE3512K2

Note : Your request will be directed to California Eastern Laboratories.

The CE3512K2 from California Eastern Laboratories is a RF Transistor with Frequency 12 GHz, Power Gain (Gp) 13.7 dB, Noise Figure 0.3 to 0.5 dB, Supply Voltage 1 to 3 V, Voltage - Gate-Source (Vgs) -1.1 to -0.39 Vdc. Tags: Surface Mount. More details for CE3512K2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CE3512K2
  • Manufacturer
    California Eastern Laboratories
  • Description
    12 GHz Super Low Noise FET in Hollow Plastic PKG

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application
    Communication
  • CW/Pulse
    CW
  • Frequency
    12 GHz
  • Power Gain (Gp)
    13.7 dB
  • Noise Figure
    0.3 to 0.5 dB
  • Transconductance
    54 to 69 mS
  • Supply Voltage
    1 to 3 V
  • Voltage - Gate-Source (Vgs)
    -1.1 to -0.39 Vdc
  • Drain Bias Current
    5 to 15 mA
  • Package Type
    Surface Mount
  • Package
    Micro-X plastic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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