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CG2H30070

RF Transistor by Wolfspeed, A Cree Company (72 more products)

Note : Your request will be directed to Wolfspeed, A Cree Company.

The CG2H30070 from Wolfspeed is a 70 W RF Power GaN HEMT that operates from 0.5 to 3 GHz. This internally matched gallium nitride transistor provides a gain of up to 11.4 dB and requires a 28 volt rail. It is available in a flange package and is an ideal general purpose, broadband solution for a variety of RF and microwave applications.

Product Specifications

    Product Details

    • Part Number :
      CG2H30070
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      70 Watt, RF Power GaN HEMT from 0.5 to 3.5 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Radar, Amplifier, Military
    • CW/Pulse :
      CW
    • Frequency :
      0.5 to 3 GHz
    • Power(W) :
      85 to 109 W
    • Small Signal Gain :
      17.8 dB
    • Power Gain (Gp) :
      12.4 dB
    • VSWR :
      5:1
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -3.8 to -2.3 V
    • Breakdown Voltage - Drain-Source :
      120 V
    • Drain Efficiency :
      70
    • Drain Current :
      23 to 28.8 A
    • Feedback Capacitance :
      1.49 pF
    • Input Capacitance :
      68.1 pF
    • Output Capacitance :
      11.3 pF
    • Package Type :
      2-Hole Flange
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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