CG2H40010 Image

CG2H40010

Note : Your request will be directed to Wolfspeed, A Cree Company.

The CG2H40010 from Wolfspeed is a GaN High Electron Mobility Transistor that operates from DC to 6 GHz. It provides an output power of 10 W and a gain of 18 dB at 2 GHz while operating from a 28 V supply. This device is available in both screw-down, flange and solder-down, pill packages. The CG2H40010 is ideal for 2-way private radios, broadband amplifiers, cellular infrastructure, and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    CG2H40010
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    10 W GaN HEMT from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Test & Measurement
  • Application
    OFDM, WCDMA, EDGE, CDMA
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power
    42.3 dBm
  • Power(W)
    17 W
  • Saturated Power
    17 W
  • Small Signal Gain
    16 to 18 dB
  • VSWR
    10:1
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    75 %
  • Feedback Capacitance
    0.186 pF
  • Input Capacitance
    4.15 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    1.58 pF
  • Package Type
    Flanged, Pill
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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