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CG2H40120F

RF Transistor by Wolfspeed, A Cree Company | Visit website (90 more products)

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The CG2H40120Ffrom Wolfspeed is an unmatched GaN HEMT transistor that operates from DC to 2.5 GHz. It provides a saturated output power of 130 W with a small signal gain of 20 dB @ 1 GHz and a drain efficiency of 70%. This transistor requires a 28 V power supply and is available in a flange or pill package. The transistor can be used in 2-Way Private Radios, Broadband Amplifiers, and for Test Instrumentation applications.

Product Specifications

    Product Details

    • Part Number :
      CG2H40120F
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      130 W GaN HEMT Transistor from DC to 2.5 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Frequency :
      DC to 2.5 GHz
    • Power :
      51.14 dBm
    • Power(W) :
      130 W
    • Gain :
      20 dB
    • Supply Voltage :
      28 V
    • Breakdown Voltage - Drain-Source :
      120 V
    • Drain Efficiency :
      70 %
    • Feedback Capacitance :
      1.6 pF
    • Input Capacitance :
      35.3 pF
    • Output Capacitance :
      9.1 pF
    • Operating Temperature :
      -40 to 65 Degrees C
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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