CG2H80030D

Note : Your request will be directed to Wolfspeed.

CG2H80030D Image

The CG2H80030D from Wolfspeed is a GaN HEMT (high-electron-mobility transistor) that operates from DC to 8 GHz. This transistor provides an output power of 30 Watts with a gain 12 dB and efficiency over 65%. It requires a supply voltage of 28 Volts and has high breakdown voltage of 84 V. This transistor is available as a bare die and is ideal for use in 2-way private radios, broadband amplifiers, cellular infrastructure and test instrumentation applications.

Product Specifications

View similar products

Product Details

  • Part Number
    CG2H80030D
  • Manufacturer
    Wolfspeed
  • Description
    30 Watt, GaN HEMT Die from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • CW/Pulse
    CW
  • Frequency
    DC to 8000 MHz
  • Power
    44.77 dBm
  • Power(W)
    w 03
  • Saturated Power
    30 W
  • Small Signal Gain
    17 Db
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.6 to -2.4 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    65 %
  • Feedback Capacitance
    0.37 pF
  • Input Capacitance
    7.3 pF
  • Output Capacitance
    2.2 pF
  • Package Type
    Die
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents