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CG2H80045D

RF Transistor by Wolfspeed, A Cree Company | Visit website (103 more products)

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The CG2H80045D from Wolfspeed is a GaN High Electron Mobility Transistor that operates from DC to 8 GHz. It provides a saturated output power of 45 Watts with a gain of 15 dB @ 4 GHz and a drain efficiency of 65%. The transistor requires a 28 V power supply. It is available as a die and is ideal for use in 2-Way private radios, broadband amplifiers, cellular infrastructure, Class A, AB, Linear amplifiers and test instrument applications.

Product Specifications

    Product Details

    • Part Number :
      CG2H80045D
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      45 W GaN HEMT from DC to 8 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on Si
    • Application Industry :
      Cellular, Test & Measurement
    • CW/Pulse :
      CW
    • Frequency :
      DC to 8000 GHz
    • Saturated Power :
      45 W
    • Small Signal Gain :
      12 to 15 dB
    • Class :
      A, AB
    • Supply Voltage :
      28 V
    • Breakdown Voltage :
      120 V
    • Drain Efficiency :
      65 %
    • Drain Current :
      10.6 to 10.9 A
    • Feedback Capacitance :
      0.7 pF
    • Input Capacitance :
      15.4 pF
    • Output Capacitance :
      3 pF
    • Package Type :
      Die
    • RoHS :
      Yes
    • Storage Temperature :
      225 to 150

    Technical Documents

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