CGH21120F

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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TheCGH21120F is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 1800 to 2300 MHz and a gain of 15 dB. This Gan Transistor can provide an output power of up to 120 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
    CGH21120F
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WCDMA, WiMax, LTE
  • CW/Pulse
    Pulse
  • Frequency
    1.8 to 2.3 GHz
  • Power
    50.79 dBm
  • Power(W)
    119.95 W
  • Pulsed Width
    40 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    13.5 to 15 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    0.7
  • Drain Current
    0.5 A
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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