Note : Your request will be directed to Wolfspeed, A Cree Company.

TheCGH25120F is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 2300 to 2700 MHz and a gain of 13 dB. This Gan Transistor can provide an output power of up to 120 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    120-W, 2300 to 2700-MHz, GaN HEMT for WiMAX and LTE

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WiMax, LTE
  • CW/Pulse
  • Frequency
    2.3 to 2.7 GHz
  • Power(W)
    129.72 W
  • Saturated Power
    51.13 dBm
  • Pulsed Width
    40 us
  • Duty_Cycle
  • Small Signal Gain
    10.5 to 12.5 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
  • Drain Current
    0.5 A
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C

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