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CGH27015

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGH27015 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 3000 MHz and can provide an output power of up to 15 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
    CGH27015
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    3G, 4G, WiMax
  • CW/Pulse
    Pulse
  • Frequency
    VHF to 3 GHz
  • Power
    33.01 dBm
  • Power(W)
    2 W
  • Small Signal Gain
    13 to 15 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    100 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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