RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGH27030S is an unmatched GaN HEMT transistor that operates from DC to 6 GHz. It can provide a power of up to 30 W and requires a 28 V supply for operation. The transistor has been designed for high efficiency, high gain and wide bandwidth capabilities making it ideal for LTE, 4G Telecom and BWA amplifier applications. It is available in a 3 x 4 mm surface mount DFN package.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    30-W, DC to 6.0-GHz, 28-V, GaN HEMT
  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    4G, LTE
  • CW/Pulse
  • Frequency
    DC to 6 GHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • Peak Output Power
    30 W
  • Small Signal Gain
    18.3 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    84 V
  • Drain Efficiency
  • Drain Current
    0.20 A
  • Package Type
    Surface Mount
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

Let us know what you need, we can help find products that meet your requirement.