CGH27060 Image


RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGH27060 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 3000 MHz and can provide an output power of up to 60 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz
  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    3G, 4G, VHF, LTE
  • CW/Pulse
  • Frequency
    VHF to 3 GHz
  • Power
    39.03 dBm
  • Power(W)
    8 W
  • Peak Output Power
    60 W
  • Small Signal Gain
    11 to 13 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    300 mA
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C
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