CGH31240 Image


RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGH31240 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 2700 to 3100 MHz and can provide an output power of up to 240 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    240-W, 2700 to 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems
  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
  • Application
    S Band
  • CW/Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power(W)
    249.46 W
  • Saturated Power
    53.01 to 53.97 dBm
  • Pulsed Width
    300 us
  • Duty_Cycle
  • Small Signal Gain
    11 to 16 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    1 A
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C
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